发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To increase uniformity of development line widths by transferring a substrate from an aligner to a reaction acceleration section with the progress of image dissection of resist being suppressed, for example, in an aligner and a development apparatus. SOLUTION: In an interface station S3, disposed between a treatment station S2 for executing a development process or the like and the aligner S4, a reaction suppressing section 7 for cooling a substrate after exposure, for example, to about 10 to 15 deg.C is installed. In the treatment station S2, the reaction acceleration section (heating section 31) for accelerating image dissection of resist is installed. If the wafer W after exposure is cooled by the reaction suppression section 7, the progress of image dissection of a resist is suppressed, Therefore, the wafer W can be transferred from the aligner S4 to the heating section 31 with the progress of image dissection of resist being suppressed, and a development progress can be carried out with uniform degree of progress for image dissection of the resist. As a result, variations in development line widths can be suppressed, and thereby the uniformity of the development line widths can be increased.
申请公布号 JP2001291664(A) 申请公布日期 2001.10.19
申请号 JP20010025266 申请日期 2001.02.01
申请人 TOKYO ELECTRON LTD 发明人 KATANO TAKAYUKI;MATSUI HIDEAKI;KITANO JUNICHI;SUZUKI AKIRA;YAMASHITA TAKEHIDE;AOYAMA TORU;IWAKI HIROYUKI;SHIMURA SATORU;DEGUCHI MASATOSHI;YOSHIHARA KOSUKE
分类号 G03F7/30;B65G49/00;H01L21/027;H01L21/677;H01L21/68;(IPC1-7):H01L21/027 主分类号 G03F7/30
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