发明名称 HEAT TREATMENT DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment device and a method for heat-treating a plane work as an object of treatment such as a semiconductor wafer, an LCD(liquid crystal display) or the like, where all the surface of the plane work can be quickly heat-treated at a uniform temperature. SOLUTION: A plane resistance heating source 2 where annular heaters 21A to 21E different in diameter from each other are concentrically arranged so as to confront the processed surface of a semiconductor wafer 1, a heat controlling part 25 controls the heat of the annular heaters 21A to 21E on the basis of temperature detection signals as to a part of the semiconductor wafer 1 corresponding to the annular band, a moving mechanism 5 which makes the resistance heating source 2 and the wafer 1 relatively approach each other, and a rotating mechanism which rotates the semiconductor wafer 1 in a position opposite to the resistance heating source 2.
申请公布号 JP2001291710(A) 申请公布日期 2001.10.19
申请号 JP20010039171 申请日期 2001.02.15
申请人 TOKYO ELECTRON LTD 发明人 OKASE WATARU
分类号 C23C16/46;H01L21/205;H01L21/22;H01L21/26;H01L21/31;H01L21/324;(IPC1-7):H01L21/31 主分类号 C23C16/46
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