发明名称 SEMICONDUCTOR MEMORY AND ITS RELIEVING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To restrict only one part of operation depending on contents of defect and to make possible the other operation by relieving flexibly memory cells as a memory of arbitrary capacity in accordance with a defective region nit as an original capacity. SOLUTION: A defective memory cell region (block, bank, or barrower region) is made to a non-selective state based n data of a defective memory cell stored in a non-volatile storage region being externally wrirtable. Selection can be performed in regions other than the above. When a defective bit is replaced by a spare memory cell and defect is left, only the defective region is made non-selective, and non-defective bits are utilized fully. Further, access can be performed by continuous addresses from the outside even if defective regions exist in fragments by alocating continuously external addresses top regions capable of being selected by an address converting means.</p>
申请公布号 JP2001291394(A) 申请公布日期 2001.10.19
申请号 JP20000099937 申请日期 2000.03.31
申请人 SHARP CORP 发明人 TAKADA SHIGEKAZU;MAEDA KENGO;MORI YASUMICHI
分类号 G06F12/16;G11C16/06;G11C29/00;G11C29/04;(IPC1-7):G11C29/00 主分类号 G06F12/16
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