CHEMICAL-MECHANICAL POLISHING COMPOSITION AND METAL LAYER POLISHING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high-speed, highly accurate polishing method. SOLUTION: The chemical mechanical polishing composition comprises multiple abrasive particles, triazole or a derivative thereof of in a quantity which is effective for corrosion proof property, ferricyanide salt oxidizing agent of such a quantity as effective for oxidation, and water, and has a pH range of 1-6. The polishing method for polishing a metallization layer on a semiconductor wafer comprises a step for removing at least a part of the metallization layer by polishing it, using that composition.