| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which is high in reliability. SOLUTION: This semiconductor device comprises TFTs and pixel parts having retention capacity, and is featured in that the TFT has a channel forming region which is disposed in the first region of a semiconductor layer, a source region and drain region, a gate insulation film which is in contact with the first region and a gate electrode on the gate insulation film, the retention capacity has the second region of the semiconductor layer, an insulation film which is in contact with the second region and a capacity wiring on the insulation film, the second region includes impurity elements for imparting n-type and p-type and the film thickness of the insulation film which is in contact with the second region is thinner than the film thickness of the gate insulation film which is in contact with the first region.</p> |
