SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To enhance a copper wiring formed through a damascene method in dielectric breakdown strength (reliability). SOLUTION: Cu wirings 46a to 46e filling wiring grooves 40 cut in a silicon oxide film 39 are formed by chemical and mechanical polishing and then subjected to a cleaning process, and the surfaces of the silicon oxide film 39 and the Cu wirings 46a to 46e are processed with reducing plasma (ammonia plasma). Thereafter, without breaking a vacuum, a cap film (silicon nitride film) is continuously formed.