| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a ruggedness treated film by which fine ruggedness can stably be formed on the surface of an inorganic material thin film in high control and to provide a ruggedness treated film produced thereby. SOLUTION: A chemical etching solution 5 is brought into contact with an inorganic material thin film 1 deposited by fine crystal grains 2 composed of intergranular regions easy to be dissolved into the chemical etching solution 5 and intragranular regions 3 hard to be dissolved therewith to dissolve the intergranular regions 4, and fine ruggedness is formed on the surface of the inorganic material thin film 1, by which the above problem is solved. At this time, preferably, the inorganic material thin film 1 is composed of a silicon oxide film or a silicon film deposited by a plasma CVD method, and the chemical etching solution 5 is composed of an aqueous solution of hydrofluoric acid or ammonium fluoride or a mixed solution therebetween.
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