| 摘要 |
<p>A noble way of forming metal conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on a silicon substrate is disclosed. The method disclosed herein is based on the use of copper chemical vapor deposition (CVD) process using Iodine or Iodine containing compounds as a catalyst-surfactant. The catalyst-surfactant Iodine has a property of being a good catalyst for copper metal surfaces while it is not easily adsorbed onto a surface of insulation layer as well as a diffusion barrier layer, thereby the amount of copper deposition on the insulation layer as well as the diffusion barrier layer is non-existent. By utilizing these properties, a simple and noble way of selectively depositing copper onto trenches, via holes, and contact holes from bottom up in order to form copper interconnects for primarily wiring purposes on a silicon substrate is disclosed.</p> |
