摘要 |
The basic subassembly of the proposed module consists of an IBGT (11), power diode (14) and auxiliary diode (18). Each input terminal (A1,A2,A3) is connected to three subassemblies connected on their output side to three output terminals (B1,B2,B3). With this arrangement common connections, such as those between transistor collectors (10), auxiliary diode cathodes (19) to an incoming phase can be located on a common substrate surface. In this way only six separate potential surfaces are necessary
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