发明名称 |
Semiconductor device and fabrication method has three-trough structure with imperfections having their distribution of concentration determined in downward direction according to required function |
摘要 |
A semiconductor device has a three-trough structure. The three troughs (31,35,43) and the other troughs (34,42) contain imperfections. The distribution of concentration for these imperfections is determined in a downward direction according to a required function. This means that required functions like the suppression of a leakage current can be achieved even in a miniaturized structure.
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申请公布号 |
DE10116800(A1) |
申请公布日期 |
2001.10.18 |
申请号 |
DE20011016800 |
申请日期 |
2001.04.04 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
YAMASHITA, TOMOHIRO;OKUMURA, YOSHINORI;HACHISUKA, ATSUSHI;SOEDA, SHINYA |
分类号 |
H01L27/08;H01L21/761;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/088;H01L27/092;H01L27/10;H01L27/108;(IPC1-7):H01L21/761;H01L21/823 |
主分类号 |
H01L27/08 |
代理机构 |
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地址 |
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