| 摘要 |
<p>An article and method of manufacturing a semiconductor flash cell. The method includes producing an isolation formation layer (10) on a silicon substrate (12), forming an oxide (14) on the isolation formation layer (10), growing a tunnel oxide layer (16) thereon, depositing a first poly silicon layer (18), masking and etching the first poly silicon layer (18), depositing a second poly silicon layer (22) and performing a blanket etch back step, forming an oxide/nitride/oxide layer (26) forming a third poly-silicon layer (28) and depositing a silicide layer (30) thereon.</p> |
