发明名称 |
Method of producing a schottky varicap |
摘要 |
A method of producing a Schottky varicap (25) including: (a) providing an epitaxial layer (12) on a semiconductor substrate (1); (b) providing an insulating layer including an oxide layer and a nitride layer on a predetermined area of the surface of the epitaxial layer (12); (c) depositing a polysilicon layer (6); (d) applying a first high temperature step to diffuse a guard ring (10) around the first predetermined area; (e) removing a predetermined portion of the polysilicon layer (6) to expose the first silicon nitride film (5); (f) implanting atoms through at least the first oxide film (4) to provide a predetermined varicap doping profile; (g) applying a second high temperature step to anneal and activate the varicap doping profile; (h) removing the first oxide film (4) to provide an exposed area; (i) providing a Schottky electrode (17) on the exposed area.
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申请公布号 |
US2001031538(A1) |
申请公布日期 |
2001.10.18 |
申请号 |
US20010797086 |
申请日期 |
2001.03.01 |
申请人 |
DEKKER RONALD;MAAS HENRICUS GODEFRIDUS RAFAEL;HERINGA ANCO;SCHLIGTENHORST HOLGER |
发明人 |
DEKKER RONALD;MAAS HENRICUS GODEFRIDUS RAFAEL;HERINGA ANCO;SCHLIGTENHORST HOLGER |
分类号 |
H01L29/872;H01L21/329;H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L29/47;H01L29/732;H01L29/93;(IPC1-7):H01L21/20 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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