| 摘要 |
<p>A method of fabricating an electronic device comprising a thin-film transistor, which addresses a problem of increased off-state current and reduced carrier mobility in self-aligned thin-film transistors. According to the method, a gate layer (2, 46) is etched back underneath a mask layer (20, 48). Following an implantation step using the mask layer as an implantation mask, the etch-back exposes implant damage which is then annealed by an energy beam (42).</p> |
