发明名称 PREPARATION OF CIGS-BASED SOLAR CELLS USING A BUFFERED ELECTRODEPOSITION BATH
摘要 <p>A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.</p>
申请公布号 WO2001078154(A2) 申请公布日期 2001.10.18
申请号 US2001011525 申请日期 2001.04.10
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