发明名称 SEMICONDUCTOR PHOTODETECTOR
摘要 <p>A semiconductor photodetector (1) comprises a substrate (2) and a CCD chip (4). The CCD chip (4) is fixed to the substrate (2) by applying and hardening a resin material (8). A gas supply passage (15) and a gas discharge passage (16) are formed in the substrate (2). The gas supply passage (15) and the gas discharge passage (16) are communicating with the upper surface (2d) of the substrate (2) on one end and communicating with the end face of a mounting part (2a) on the other end. The gas supply passage (15) is connected to a gas storage (19) and a gas supply pump (20), and N2 gas stored in the gas storage (19) is forced into a space in the substrate (2) through the gas supply passage (15) by the gas supply pump (20). The N2 gas is circulated in the space and discharged through the gas discharge passage (16).</p>
申请公布号 WO2001078137(P1) 申请公布日期 2001.10.18
申请号 JP2001003076 申请日期 2001.04.10
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