发明名称 APPARATUS FOR MEASURING GAS VOLUME OF ION IMPLANTATION AND METHOD FOR CONTROLLING ION IMPLANTATION USING THE SAME
摘要 PURPOSE: An apparatus for measuring gas volume is provided to improve the reliability of the measurement by exactly detecting the gas volume generated from a photoresist using a quantity of the light and a variation of the quantity of the light. CONSTITUTION: In an ion implanter including a wheel(4) set on a wafer(1), a light emitting part(2) is formed at an inner region of the wheel(4). A plurality of light receiving parts(3a,3b,3c) are formed at an outer region of the wheel(4) and spaced from the wheel(4) constantly along the cylindrical direction of the wheel. Since the light emitting part(2) and light receiving parts(3a,3b,3c) are formed at both sides of the wafer(1), the gas volume generated from the photoresist is calculated by the quantity of the light detected from the light receiving parts.
申请公布号 KR20010090372(A) 申请公布日期 2001.10.18
申请号 KR20000015297 申请日期 2000.03.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 MUN, HO SEONG
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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