发明名称 |
PREPARATION OF CIGS-BASED SOLAR CELLS USING A BUFFERED ELECTRODEPOSITION BATH |
摘要 |
A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.
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申请公布号 |
WO0178154(A2) |
申请公布日期 |
2001.10.18 |
申请号 |
WO2001US11525 |
申请日期 |
2001.04.10 |
申请人 |
DAVIS, JOSEPH & NEGLEY;BHATTACHARYA, RAGHU, NATH |
发明人 |
BHATTACHARYA, RAGHU, NATH |
分类号 |
C25D5/00;H01L21/00;H01L31/00;H01L31/032;H01L31/0336;(IPC1-7):H01L31/032 |
主分类号 |
C25D5/00 |
代理机构 |
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