发明名称 PREPARATION OF CIGS-BASED SOLAR CELLS USING A BUFFERED ELECTRODEPOSITION BATH
摘要 A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.
申请公布号 WO0178154(A2) 申请公布日期 2001.10.18
申请号 WO2001US11525 申请日期 2001.04.10
申请人 DAVIS, JOSEPH & NEGLEY;BHATTACHARYA, RAGHU, NATH 发明人 BHATTACHARYA, RAGHU, NATH
分类号 C25D5/00;H01L21/00;H01L31/00;H01L31/032;H01L31/0336;(IPC1-7):H01L31/032 主分类号 C25D5/00
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