Nonvolatile memory device and manufacturing method therefor

摘要

A nonvolatile memory device and a manufacturing method therefor are provided. The nonvolatile memory device includes source pad lines connecting source regions of neighboring cells, parallel to word lines. Thus, the number of common source lines necessary for the overall cell array area can be reduced. Also, the distance between a word line and a contact hole is minimized by providing self-aligned bit line contact holes, thereby minimizing the size of a cell array area.