发明名称 High density flip chip memory arrays
摘要 A low alpha emissivity-induced error solder bump, flip-chip integrated circuit device. The device includes a semiconductor die having an active surface and a bond pad array disposed about the active surface of the die. The active surface of the die includes logic circuits adjacent memory cell arrays. Each of the bond pads directly overlays a logic circuit, to which they may be connected. The present invention also includes methods for designing and fabricating the invented devices and connecting them to a carrier substrate.
申请公布号 US2001030371(A1) 申请公布日期 2001.10.18
申请号 US20010881792 申请日期 2001.06.15
申请人 AKRAM SALMAN;FARNWORTH WARREN M.;WOOD ALAN G. 发明人 AKRAM SALMAN;FARNWORTH WARREN M.;WOOD ALAN G.
分类号 H01L21/60;H01L23/552;H01L23/556;H01L27/108;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/60
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