发明名称 Semiconductor device simulation method, semiconductor device simulator, computer program for semiconductor device simulation, and method of manufacturing the semiconductor device
摘要 A simulation method simulates a self-aligned silicide (SALICIDE) process according to heat treatment temperatures and changes in the composition of a silicide film during first and second heat treatments. The simulation method separately simulates silicide reactions in the first and second heat treatments according to species (metal or silicon) diffusing through a silicide, to thereby improve the accuracy of simulations.
申请公布号 US2001032330(A1) 申请公布日期 2001.10.18
申请号 US20010833761 申请日期 2001.04.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KUSUNOKI NAOKI
分类号 H01L21/00;G06F17/50;(IPC1-7):G06F17/50;G06F9/45;G06F9/455 主分类号 H01L21/00
代理机构 代理人
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