发明名称 |
Semiconductor device simulation method, semiconductor device simulator, computer program for semiconductor device simulation, and method of manufacturing the semiconductor device |
摘要 |
A simulation method simulates a self-aligned silicide (SALICIDE) process according to heat treatment temperatures and changes in the composition of a silicide film during first and second heat treatments. The simulation method separately simulates silicide reactions in the first and second heat treatments according to species (metal or silicon) diffusing through a silicide, to thereby improve the accuracy of simulations.
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申请公布号 |
US2001032330(A1) |
申请公布日期 |
2001.10.18 |
申请号 |
US20010833761 |
申请日期 |
2001.04.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUSUNOKI NAOKI |
分类号 |
H01L21/00;G06F17/50;(IPC1-7):G06F17/50;G06F9/45;G06F9/455 |
主分类号 |
H01L21/00 |
代理机构 |
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