| 摘要 |
The present invention provides a semiconductor device comprising: a base layer made of a gallium nitride-based material; a cladding layer extending over the base layer; and an active layer extending over the cladding layer, and the active layer including at least a photo-luminescent layer of InxAlyGa1--x-yN (0<x<1, 0<=y<=0.2), wherein a standard deviation DELTAx of a microscopic fluctuation in an indium composition of the photo-luminescent layer is not more than 0.067, or wherein a standard deviation sigma of a microscopic fluctuation in a band gap energy of the photo-luminescent layer is not more than 40 meV, or wherein a differential gain "dg/dn" of the active layer satisfies dg/dn>=1.0x10-20 (m2).
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