| 摘要 |
PURPOSE: To provide the manufacturing method of a semiconductor device, which is high in the detection precision of an alignment mark which is used for a photolithography. CONSTITUTION: A first conducting layer 205 is formed on the whole surface of a semiconductor substrate 201, the layer 205 is made to remain on an alignment mark formation region and storage electrodes 205 are formed on a memory cell region. Subsequently, a capacitor insulating film is formed on the whole surface of the substrate 201, a second conducting film 206 is formed on the capacitor insulating film, the layer 206 is made to remain on the alignment mark formation region and a plate electrode 206 is formed on the memory cell region. Moreover, an insulating film 207 is formed on the whole surface of the substrate 201, an upper wiring layer 208 is formed on a memory cell region on the film 207 and at the same time, alignment marks 208-a are formed on the alignment mark formation region. Hereby, a silica film 210 on the marks 208-a can be removed and when a resist pattern is formed, a detection of the marks 208-a can be precisely performed. |
