| 发明名称 |
Methods and apparatus for forming a film on s substrate |
| 摘要 |
This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k<=3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.
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| 申请公布号 |
US2001030369(A1) |
申请公布日期 |
2001.10.18 |
| 申请号 |
US20010760820 |
申请日期 |
2001.01.17 |
| 申请人 |
MACNEIL JOHN;WILBY ROBERT JOHN;BEEKMAN KNUT |
发明人 |
MACNEIL JOHN;WILBY ROBERT JOHN;BEEKMAN KNUT |
| 分类号 |
H01L23/522;C23C16/30;C23C16/36;C23C16/505;H01L21/20;H01L21/311;H01L21/314;H01L21/316;H01L21/318;H01L21/768;(IPC1-7):H05H1/24;C23C16/00;H01L21/31;H01L21/469;H01L21/476;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/522 |
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