HIGHLY EFFICIENT UV-EMITTER BASED ON NITRIDE SEMICONDUCTORS

摘要

Disclosed are a layer structure of semiconductors, a layer-shaped semiconductor crystal and a light-emitting semiconductor component (LED or laser diode). One or several semiconductor layers on the basis of group III nitride compounds having a hexagonal structure are oriented in such a way that the c-axes of the hexagonal structure extend in parallel in relation to the respective substrate surface or layer level. The disadvantages of conventional semiconductor components with regard to illuminating efficiency, wavelength stability and reproducibility of emission characteristics are overcome by said layer orientation.