发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To provide a mounting structure which realizes a low on-resistance by breaking down the mounting structure of a power MOSFET and is suitable for a mass-production in the present condition that such a demand is strong that a mobile terminal is miniaturized and lightened, and a use lifetime of an integral battery is prolonged. CONSTITUTION: This mounting structure is constituted by a lower frame 4 having a header 2 for sticking a semiconductor chip 1 and its external leads 3d, 3g; the semiconductor chip 1 stuck to the header 2; an upper frame having an abutment electrode stuck to a current passing electrode 5 formed on an upper face of the semiconductor chip 1 and its external lead; and a mold resin 8, thereby mass-producing a two-sheet frame to realize the mounting structure having an extremely low on-resistance.
申请公布号 KR20010090520(A) 申请公布日期 2001.10.18
申请号 KR20010015111 申请日期 2001.03.23
申请人 SANYO ELECTRIC CO., LTD. 发明人 FUKUDA HIROKAZU
分类号 H01L23/50;H01L23/48;H01L23/495 主分类号 H01L23/50
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