发明名称 |
Light-emitting device and fabricating method thereof |
摘要 |
A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum well layers and a quantum barrier layer interposed between the adjacent quantum well layers. The first guide layer and the second guide layer are disposed to be adjacent to the quantum well layers. The first guide layer and the second guide layer have a forbidden band width which is larger than a forbidden band width of the quantum well layers. The forbidden band width of at least one of the first guide layer and the second guide layer is smaller than a forbidden band width of the quantum barrier layer. <IMAGE> |
申请公布号 |
EP0908988(A3) |
申请公布日期 |
2001.10.17 |
申请号 |
EP19980308112 |
申请日期 |
1998.10.06 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MATSUMOTO, MITSUHIRO;TATSUMI, MASAKI |
分类号 |
H01L33/02;H01L33/06;H01L33/30;H01L33/32;H01S5/065;H01S5/20;H01S5/223;H01S5/30;H01S5/32;H01S5/34 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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