发明名称 LOW CONTAMINATION HIGH DENSITY PLASMA ETCH CHAMBERS AND METHODS FOR MAKING THE SAME
摘要 <p>A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater thermally connected to the liner support so as to thermally conduct heat from the liner support to the chamber liner. The liner support can be made from flexible aluminum material and the chamber liner comprises a ceramic material. The flexible wall can include slots which divide the liner support into a plurality of fingers which enable the flexible wall to absorb thermal stresses.</p>
申请公布号 EP1145273(A2) 申请公布日期 2001.10.17
申请号 EP19990969835 申请日期 1999.09.24
申请人 LAM RESEARCH CORPORATION 发明人 WICKER, THOMAS, E.;MARASCHIN, ROBERT, A.;KENNEDY, WILLIAM, S.
分类号 H05H1/46;C23C16/44;H01J27/16;H01J37/00;H01J37/08;H01J37/32;H01J37/36;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01J37/00 主分类号 H05H1/46
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