发明名称 Thermoelectric semiconductor deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors
摘要 <p>A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a derated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above in which they are arranged alternatively and electrically connected in series is also disclosed. <IMAGE></p>
申请公布号 EP0834930(B1) 申请公布日期 2001.10.17
申请号 EP19970120243 申请日期 1991.04.18
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YOKOTANI, YOUICHIROU;KUGIMIYA, KOUICHI;ANDO, HAMAE
分类号 H01L35/12;H01L35/14;H01L35/16;H01L35/32;(IPC1-7):H01L35/32 主分类号 H01L35/12
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