发明名称 |
Thermoelectric semiconductor deaerated into a vacuum and thermoelectric panel using p-type and n-type thermoelectric semiconductors |
摘要 |
<p>A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a derated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above in which they are arranged alternatively and electrically connected in series is also disclosed. <IMAGE></p> |
申请公布号 |
EP0834930(B1) |
申请公布日期 |
2001.10.17 |
申请号 |
EP19970120243 |
申请日期 |
1991.04.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOKOTANI, YOUICHIROU;KUGIMIYA, KOUICHI;ANDO, HAMAE |
分类号 |
H01L35/12;H01L35/14;H01L35/16;H01L35/32;(IPC1-7):H01L35/32 |
主分类号 |
H01L35/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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