发明名称 OXIDE MAGNETIC MATERIAL, CHIP PART USING THE SAME MATERIAL AND METHODS FOR MANUFACTURING THE SAME MATERIAL AND THE SAME PART
摘要 PURPOSE: To provide a Ni-Cu-Zn oxide base magnetic material in which the internal conductor is stabilized at very low sintering temperature and which is excellent in characteristics in high frequency region of 100 MHz or higher by adding an additive for minimizing the deterioration of electromagnetic characteristics even though the additive reacts with the principal component of a parent material and also minimizing the deterioration of the temperature characteristics of the inductance. CONSTITUTION: This oxide magnetic material consists of 35.0-51.0 mole % Fe2O3, 1.0-35.0 mole % CuO, 38.0-64.0 mole % NiO and 0-10.0 mole % (including 0) ZnO.
申请公布号 KR20010089994(A) 申请公布日期 2001.10.17
申请号 KR20010012505 申请日期 2001.03.12
申请人 TDK CORPORATION 发明人 ITO KO;ONO TAKUYA
分类号 C01G49/00;C01G53/00;C04B35/26;C04B35/30;H01F1/22;H01F1/34;H01F41/02;H01F41/04;(IPC1-7):H01F1/34 主分类号 C01G49/00
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