发明名称 |
POWER SEMICONDUCTOR DEVICES HAVING IMPROVED HIGH FREQUENCY SWITCHING AND BREAKDOWN CHARACTERISTICS |
摘要 |
Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-based source electrodes. The use of the trench-based source electrode instead of a larger gate electrode reduces the gate-to-drain capacitance (CGD) of the UMOSFET and improves switching speed by reducing the amount of gate charging and discharging current that is needed during high frequency operation. |
申请公布号 |
EP1145327(A2) |
申请公布日期 |
2001.10.17 |
申请号 |
EP19990971151 |
申请日期 |
1999.10.20 |
申请人 |
NORTH CAROLINA STATE UNIVERSITY |
发明人 |
BALIGA, BANTVAL, JAYANT |
分类号 |
H01L21/8234;H01L27/04;H01L27/088;H01L27/095;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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