发明名称 |
Removal of organic anti-reflection coatings in integrated circuits |
摘要 |
A method for manufacturing an integrated circuit structure is provided having a semiconductor substrate and depositing a layer to be patterned on the semiconductor substrate. An organic anti-reflection coating is deposited on the layer to be patterned and then an organic photoresist on the anti-reflection coating. The photoresist is patterned and developed to form an opening having side walls and to expose a portion of the anti-reflection coating. The photoresist and the exposed portion of the anti-reflection coating adsorb non-active molecules. A unidirectional electron-ion bombardment causes desorption of non-active molecules that gives access of active molecules to the exposed surface of the anti-reflection coating. Bombardment also causes decomposition of non-active molecules on the exposed surfaces, which produces active atoms. Both processes provide unidirectional removal of the anti-reflection coating without attacking the photoresist side walls and underlying layers.
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申请公布号 |
US6303477(B1) |
申请公布日期 |
2001.10.16 |
申请号 |
US20010826489 |
申请日期 |
2001.04.04 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD;LUCENT TECHNOLOGIES, INC. |
发明人 |
IANOVITCH SERGUEI |
分类号 |
H01L21/3065;G03F7/09;G03F7/40;H01L21/027;H01L21/311;(IPC1-7):H01L21/38 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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