发明名称 |
Quartz crucible reproducing method |
摘要 |
An inner surface of a quartz crucible after being used is cleaned by an acid liquid, and an extraneous material adhered to its inner surface is removed. The inner surface after the extraneous material has been removed is heat treated at 1600° C. or more, and the inner surface where cristobalite formation occurs is recovered into an amorphous state. In this manner, the quartz crucible after being used for growing single crystal silicon is reproduced to a level equal to a new crucible.
|
申请公布号 |
US6302957(B1) |
申请公布日期 |
2001.10.16 |
申请号 |
US20000670715 |
申请日期 |
2000.09.28 |
申请人 |
SUMITOMO METAL INDUSTRIES, LTD. |
发明人 |
ITO MAKOTO;MURAKAMI HIROKI |
分类号 |
C30B33/02;C03B32/00;C03C15/00;C03C23/00;C30B15/10;C30B35/00;(IPC1-7):C30B15/00 |
主分类号 |
C30B33/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|