| 摘要 |
The integrated dynamic semiconductor memory has memory cells which are combined to form individually addressable normal units and redundant units. The redundant units are used to replace faulty normal units. The address of a normal unit to be replaced is in each case stored in memory units. A self-test unit carries out a functional test of the memory cells with a defined memory-retention time for the memory cell contents, and an analysis as to which of the normal units are to be replaced by which of the redundant units. The memory units are programmed in accordance with the analysis result, and the memory-retention time is increased following the programming. The functional test, the analysis and the programming are repeated until all the memory units have been programmed. This makes it possible to achieve a high quality semiconductor memory in terms of its memory-retention time for the memory cell contents, with a comparatively low test and repair effort.
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