Method for making transistor spacer etch pinpoint structure

摘要

A method is provided for forming a transistor spacer etch endpoint structure of an integrated circuit, and an integrated circuit formed according to the same. A gate is formed over a portion of a substrate. A dielectric layer is formed over the integrated circuit and an oxide layer is formed over the dielectric layer. The oxide layer is patterned and etched to form sidewall oxide spacers on each side of the gate and over a portion of the dielectric layer. The dielectric layer not covered by the sidewall oxide spacers is then removed.