发明名称 Shielded bit line architecture for memory arrays
摘要 A memory array, in accordance with the invention, includes a plurality of memory cells disposed in an array. A plurality of bitlines are included for reading and writing data to and from the memory cells. The plurality of bitlines include a first group of bitlines and a second group of bitlines. Each bitline of the first group is interposed between bitlines of the second group, and each bitline of the second group is interposed between bitlines of the first group. The first group of bitlines are active when the second group of bitlines are inactive, and the second group of bitlines are active when the first group of bitlines are inactive such that adjacent inactive bitlines provide a shield to prevent cross-coupling between active bitlines.
申请公布号 US6304479(B1) 申请公布日期 2001.10.16
申请号 US20000602758 申请日期 2000.06.23
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INFINEON TECHNOLOGIES RICHMOND, LP 发明人 VOLLRATH JOERG;FERA MICHAEL;MOORE PHILIP
分类号 G11C5/06;G11C7/18;(IPC1-7):G11C5/06 主分类号 G11C5/06
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