Nonvolatile semiconductor memory, and method of manufacturing the same

摘要

A method of manufacturing the semiconductor memory comprises element described below;(a) forming a first oxide film on a semiconductor substrate;(b) forming a polysilicon electrode on the first oxide film by sub-steps of forming a low impurity density polysilicon layer, forming a high impurity density polysilicon layer, and forming a low impurity density polysilicon layer in this order;(c) forming a second oxide film on the polysilicon electrode.