发明名称 Method for forming high performance system-on-chip using post passivation process
摘要 The present invention extends the above referenced continuation-in-part application by in addition creating high quality electrical components, such as inductors, capacitors or resistors, on a layer of passivation or on the surface of a thick layer of polymer. In addition, the process of the invention provides a method for mounting discrete electrical components at a significant distance removed from the underlying silicon surface.
申请公布号 US6303423(B1) 申请公布日期 2001.10.16
申请号 US20000721722 申请日期 2000.11.27
申请人 MEGIC CORPORATION 发明人 LIN MOU-SHIUNG
分类号 H01L21/02;H01L21/768;H01L23/522;H01L23/528;H01L23/532;H01L23/60;H01L23/64;H01L27/06;H01L27/08;(IPC1-7):H01L21/824;H01L21/823 主分类号 H01L21/02
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