| 发明名称 |
Integrated bipolar junction transistor for mixed signal circuits |
| 摘要 |
A method for forming integrated circuit bipolar junction transistors for mixed signal circuits. The implants used to form the well regions of the CMOS circuits 20, 40 form the collector regions of bipolar junction transistors. The CMOS transistor pocket implants form the base region of the bipolar junction transistor, and the CMOS drain extension implants form the emitter region of the bipolar junction transistor.
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| 申请公布号 |
US6303420(B1) |
申请公布日期 |
2001.10.16 |
| 申请号 |
US20000618413 |
申请日期 |
2000.07.18 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SRIDHAR SEETHARAMAN;CHATTERJEE AMITAVA;SHICHIJO HISASHI;MORTON ALEC J. |
| 分类号 |
H01L29/73;H01L21/331;H01L21/8222;H01L21/8238;H01L21/8248;H01L21/8249;H01L27/06;H01L29/732;(IPC1-7):H01L21/823 |
主分类号 |
H01L29/73 |
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