| 摘要 |
The present invention provides a method for cleaning particles from a semiconductor topography that has been polished using a fixed-abrasive polishing process by applying a cleaning solution including either (a) an acid and a peroxide or (b) an acid oxidant to the topography. According to an embodiment, a semiconductor topography is polished by a fixed-abrasive process in which the topography is pressed face-down on a rotating polishing pad having particles embedded in the pad while a liquid absent of particulate matter is dispensed onto the pad. The particles may include, e.g., cerium oxide, cerium dioxide, alphaalumina, gammaalumina, silicon dioxide, titanium oxide, chromium oxide, or zirconium oxide. A cleaning solution comprising either (a) an acid and a peroxide, e.g., hydrogen peroxide, or (b) an acid oxidant is applied to the semiconductor topography after the polishing process is completed. Examples of acids that may be used include, but are not limited to, sulfuric acid, hydrochloric acid, hydrobromic acid, hydrofluoric acid, formic acid, acetic acid, nitric acid, perchloric acid, perbromic acid, performic acid, phosphoric acid, and peracetic acid Advantageously, the cleaning solution effectively eliminates all or at least a significant portion of the particles on the semiconductor topography.
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