发明名称 |
Method of manufacturing a capacitor in a semiconductor device |
摘要 |
The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta2O5 to form a dielectric film in a Ta2O5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO3 film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta2O5 dielectric film and then performing deposition and thermal process of Ta2O5 to form a Ta2O5 dielectric film. As a good WO3 film is formed on the surface of the underlying tungsten electrode before forming a Ta2O5 dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta2O5 dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO3 film could be prevented, thereby improving the characteristic of the leak current of the Ta2O5 capacitor.
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申请公布号 |
US6303427(B1) |
申请公布日期 |
2001.10.16 |
申请号 |
US20000659508 |
申请日期 |
2000.09.11 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
SONG HAN SANG;KIM YOU SUNG;LIM CHAN;PARK CHANG SEO;KIM KYONG MIN |
分类号 |
H01L21/288;H01L21/02;H01L21/316;(IPC1-7):H01L21/336;H01L21/824 |
主分类号 |
H01L21/288 |
代理机构 |
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