发明名称 Integrated asymmetric resonant tunneling diode pair circuit
摘要 Presented is an integrated asymmetric resonant tunneling diode pair circuit exhibiting current-voltage characteristics providing multistable states which may be tailored for multistable solutions. Also presented are apparatus incorporating the invention therein, for which the invention provides a simple, integrated design that greatly reduces circuit complexity and size. The present invention is useful in all applications utilizing multiple peak characteristics of the current-voltage curve, such as multiple-valued logic analog-to-digital quantizers, frequency multiplication devices, waveform scrambling devices, memory operations, and parity-bit generation, among others.
申请公布号 US6303941(B1) 申请公布日期 2001.10.16
申请号 US19990427196 申请日期 1999.10.25
申请人 HRL LABORATORIES 发明人 XIE YI-MING;SCHULMAN JOEL N.;CHOW DAVID H.
分类号 H01L29/88;H03M1/34;(IPC1-7):H01L29/06 主分类号 H01L29/88
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