| 摘要 |
In the present invention, a semiconductor device includes a first insulation layer formed on a semiconductor substrate, an elevating pad formed on the first insulation layer, a second insulation layer covering the elevating pad, a plurality of fuses formed on the second insulation layer and over the elevating pad, a third insulation layer formed on the fuses, and an opening formed in a top portion of the third insulation layer and over the fuses. With this invention, the horizontal level of the fuses are elevated due to the existence of the elevating pad, which makes the distance between the fuse window and fuses be closer than that of the conventional and that reduces the step difference. Thus, a laser beam can reliably blow out all of the fuses reliably.
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