| 发明名称 |
MOCVD metal oxide for one transistor memory |
| 摘要 |
A method of fabricating a one-transistor memory includes, on a single crystal silicon substrate, depositing a bottom electrode structure on a gate oxide layer; implanting ions to form a source region and a drain region and activating the implanted ions spin coating the structure with a first ferroelectric layer; depositing a second ferroelectric layer; and annealing the structure to provide a c-axis ferroelectric orientation.
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| 申请公布号 |
US6303502(B1) |
申请公布日期 |
2001.10.16 |
| 申请号 |
US20000588940 |
申请日期 |
2000.06.06 |
| 申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
HSU SHENG TENG;EVANS DAVID R.;LI TINGKAI;MAA JER-SHEN;ZHUANG WEI-WEI |
| 分类号 |
H01L21/8247;H01L21/28;H01L21/8246;H01L27/105;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/44;H01L21/824 |
主分类号 |
H01L21/8247 |
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