| 摘要 |
After a metal deposition preclean, a very thin titanium layer is deposited followed by a thick nickel layer on a semiconductor silicon substrate. The titanium and nickel are deposited sequentially in a vacuum cluster tool to prevent oxidation of titanium in air. The silicon substrate and the metal layers are subject to a relatively low temperature anneal. The annealing causes the titanium to act as a reductant to break up the residual surface oxide on the surface of the silicon substrate and allows the nickel to react with the silicon substrate to form nickel silicide.
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