发明名称 |
Silicon layer to improve plug filling by CVD |
摘要 |
A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. A layer of silicon is deposited on the walls of an opening. In one aspect, the opening is filled by depositing electrically conductive material directly over the silicon. In another aspect, the layer of silicon is exposed to a precursor gas that reacts with the silicon so as to (a) form a volatile material that consumes substantially all of the silicon and (b) deposit an electrically conductive material within the opening.
|
申请公布号 |
US6303480(B1) |
申请公布日期 |
2001.10.16 |
申请号 |
US19990395040 |
申请日期 |
1999.09.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
DESAI SANDEEP A.;HERNER SCOTT BRAD;GHANAYEM STEVE G. |
分类号 |
H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|