| 摘要 |
The present invention is related to an efficient thermal oxidation process that allows the controlled growth of in-situ cleaned high quality thin oxides on a silicon-containing substrate. Said oxidation is performed in an ambient comprising at least the reaction products of a chloro-carbon precursor and ozone. This thermal oxidation is preferably executed at low temperatures, being preferably below 500° C., in order to limit the in-diffusion of metal surface contaminants is limited. The present invention is further related to the decomposition of organic chloro-carbon precursors at low temperatures by the introduction of ozone prior to the actual oxidation step.
|
