| 摘要 |
The present invention relates to a pressure sensor having excellent temperature characteristics and provided with a diaphragm with the desired constant thickness, and it also relates to a method for manufacturing such pressure sensor. The semiconductor pressure sensor of this invention comprises a diaphragm formed by aniso- tropic etching of silicon single crystal, chara- cterized in that an etch-stop layer is provded at the site where etching is to be stopped, and that an etch-stop layer having insulating property is provided as the insulating layer of the pressure- sensitive portion. Also, the method for manufacturing the pressure sensor of this invention is charactrized in that it comprises: a process for forming SiO2 layer by heating and oxidizing the bonded surface of silicone single crystal wafers; a process for bonding said SiO2 layers of two silicon single crystal wafers, on which SiO2 layer is formed; a process for polishing upper and lower surfaces of the bonded silicon single crystal wafers to a constant thickness; a process for sequentially and epitaxially growing Si, single crystal Al2O3 and Si sequentially on upper surface of silicon single crystal wafers having a constant thickness; and a process for removing the lower surface of silicon single crystal wafers by etching except the supporting portion. Also, the method for manufacturing the other pressure sensor of the invention is characterized in that single crystal Al2O3 is epitaxially grown on silicon single crystal wafer, Si is then epi- taxially grown on its upper surface, and single crystal Al2O3 and Si are further sequentially and epitaxially grown on its upper surface.
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