| 摘要 |
In one method for preparing a semiconductor wafer a pair of wafer preparation assemblies is disposed in an opposing relationship in an enclosure (2). Each of the wafer preparation assemblies has a first wafer preparation member (8, 10 and 8', 10') and a second wafer preparation member (12, 14 and 12', 14'). A wafer (W) is disposed between the wafer preparation assemblies in a vertical orientation and the wafer is rotated. The wafer preparation assemblies are oriented such that the first wafer preparation members (8, 10, and 8', 10') contact opposing surfaces of the rotating wafer in an opposing relationship and then oriented such that the second wafer preparation members (12, 14 and 12', 14') contact opposing surfaces of the rotating wafer in an opposing relationship. At least one wafer preparation parameter is controlled to obtain a variable wafer material removal rate as the contact areas defined on the first and second opposing surfaces are moved from a first position to a second position. |
