METHOD FOR REDUCING DEFECT OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for reducing a defect of a semiconductor substrate is provided to improve characteristic, reliability and yield by changing the minimum part of the substrate so that a microscopic defects are effectively eliminated. CONSTITUTION: A semiconductor substrate heated up to a temperature of 1150 deg.C is cooled to a temperature of 900 deg.C at the first cooling rate. The semiconductor substrate cooled to the temperature of 900 deg.C is cooled at the second cooling rate faster than the first cooling rate. The semiconductor substrate is a silicon substrate formed by a Czochralski method. The first cooling rate is not faster than 1.5 deg.C/minute.