| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device which allows a high-cost precious film such as platinum group being an electrode material of a ferroelectric capacitor to be thinned and the electrode height to be thickened to ensure the capacitance. SOLUTION: A metal film 107 made of other than platinum group is formed like a pedestal, a platinum group metal film 108 is formed so as to cover it and used as a first electrode, the first electrode is covered with a ferroelectric film 109, and then a conductive metal film 110 is formed as a second electrode, thus increasing the total thickness of the electrode films. |
